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Record #17658

Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

Tien-Yu Hsieh, Ting-Chang Chang, Te-Chih Chen, Ming-Yen Tsai, Yu-Te Chen

Journal

Thin Solid Films

Publisher

Original paper date

Nov 7, 2012

Original DOI

10.1016/j.tsf.2012.09.093

Country

🇹🇼 Taiwan

Institution

Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan · Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan · Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan

Open access

No

Article type

Research Article

Broad categories

(PHY) Engineering - Electrical (PHY) Materials Science

Citation lifecycle

How this paper is being cited

Pre-retraction

0

Same day

0

Post-retraction

3

% post-retraction

100.0%

~0.0 citations/yr before retraction · ~0.2 citations/yr after

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