Record #17862
N-type doping strategies for InGaAs
Publisher
Original paper date
Oct 19, 2016
Original DOI
Country
Institution
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA · Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA · Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA
Open access
No
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Broad categories
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Pre-retraction
0
Same day
0
Post-retraction
3
% post-retraction
100.0%
~0.0 citations/yr before retraction · ~0.3 citations/yr after
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