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Record #18480

Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP d-doped high electron mobility transistor

Ching Sung Lee, Wei Chou Hsu

Journal

Applied Physics Letters

Publisher

Original paper date

Jan 12, 2005

Original DOI

10.1063/1.1855387

Country

🇹🇼 Taiwan

Institution

Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Road, Taichung 40724, Taiwan, Republic of China · Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan, Republic of China

Open access

No

Article type

Research Article

Broad categories

(PHY) Chemistry (PHY) Physics

Citation lifecycle

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