Record #18816
High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy
Journal
Publisher
Original paper date
Jan 3, 2013
Original DOI
Country
Open access
No
Article type
Broad categories
Notes from Retraction Watch
Notice published after article marked as retracted;
Citation lifecycle
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Pre-retraction
1
Same day
0
Post-retraction
0
% post-retraction
0.0%
~0.2 citations/yr before retraction · ~0.0 citations/yr after
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