Record #48279
Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability
Journal
Publisher
Original paper date
Dec 11, 2021
Original DOI
Country
Institution
School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, Republic of Korea · Indian Institute of Information Technology Surat, India · Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, Republic of Korea
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No
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Citation lifecycle
How this paper is being cited
Pre-retraction
2
Same day
0
Post-retraction
3
% post-retraction
60.0%
~1.1 citations/yr before retraction · ~1.0 citations/yr after
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