Record #4997
Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances
Publisher
Original paper date
Jun 18, 2002
Original DOI
Broad categories
Citation lifecycle
How this paper is being cited
Pre-retraction
5
Same day
0
Post-retraction
14
% post-retraction
73.7%
~0.6 citations/yr before retraction · ~0.9 citations/yr after
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