Record #8518
Impact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET
Journal
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Original paper date
Nov 3, 2010
Original DOI
Country
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Open access
No
Article type
Citation lifecycle
How this paper is being cited
Pre-retraction
2
Same day
0
Post-retraction
3
% post-retraction
60.0%
~0.4 citations/yr before retraction · ~0.3 citations/yr after
— citing papers
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